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| ISDN S Interface Transformer REINFORCED INSULATION PER EN 41003/EN 60950 Turns Ratio ( + 5% ) 1CT:2 PARAMETER Open Circuit Inductance Leakage Inductance Interwinding Capacitance (CW/W) Primary DC Resistance Secondary DC Resistance Isolation (HI-POT) MIN. 22 MAX. UNITS mHy SCHEMATIC DIAGRAM P ri. S ec. 15 60 3.0 5.5 3.0Kv Hy pF ohms ohms V RMS TEST CONDITIONS: Oscillation Voltage = 700mV Oscillation Frequency = 10.0 KHz Inductance measured on Primary winding. Pins 4-7, short 9-6. MEETS THE PULSE WAVEFORM TEMPLATE OF CCITT I.430. Primary is Line Side Unbalanced current at TE: Idc = 5 mA max. Longitudinal Conversion Loss - 10KHz to 300 KHz: 60dB min. PHYSICAL DIMENSIONS inches (mm) Unused Pins Omitted RHOMBUS P/N: Dot indicates pin # 1 T-10459 NAME: SHEET: 1 OF 1 CUST P/N: DATE: 07/02/96 Rhombus Industries Inc. Transformers & Magnetic Products www.rhombus-ind.com 15801 Chemical Lane, Huntington Beach, CA 92649-1595 Phone: (714) 898-0960 FAX: (714) 896-0971 |
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